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Vol. 24 No. 9 (2012): Vol 24 Issue 9

Preparation of ZnO Thin Films by Galvanostatic Method

Shibiao Wu
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China
Ling Xu
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China
Haiyan Xu
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China
Xia Chen
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China
Yejun Ge
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China
Shaofeng Zhu
School of Materials & Chemical Engineering, Anhui University of Architecture, Hefei 230022, P.R. China

Corresponding Author(s) : Shibiao Wu

wsbl@aiai.edu.cn

Asian Journal of Chemistry, Vol. 24 No. 9 (2012): Vol 24 Issue 9

Abstract

Zinc oxide films were electrodeposited on ITO glass from aqueous solution containing 0.2 mol/L zinc nitrate using galvanostatic method. The morphology was characterized by scanning electron microscopy. The structure of the films was investigated with XRD method. The electrodeposition process conditions are followings: electric cell temperature is 60 ºC; current density is 5-10 mA/cm2.

Keywords

ZnO Electrodeposition Galvanostatic method
Wu, S., Xu, L., Xu, H., Chen, X., Ge, Y., & Zhu, S. (2012). Preparation of ZnO Thin Films by Galvanostatic Method. Asian Journal of Chemistry, 24(9), 3989–3990. Retrieved from https://asianpubs.org/index.php/ajchem/article/view/9519
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