Self-Heating Effects in a Silicon Carbide Polymers (6H-SiC and 3C-SiC) Semiconductor Laser

Abstract

In this paper, we present the effects of self-heating on the characteristics of a silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser. The device employs 3C-SiC quantum well, which is sandwiched between two layers of 6H-SiC as cladding regions that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 6H using a numerical simulator. This paper provides key results of the device characteristics upon lattice temperature heating, including the output power versus electrical bias and the DC I-V.