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Growth of Cr-doped GaN Nanowires
Corresponding Author(s) : Faming Gao
Asian Journal of Chemistry,
Vol. 25 No. 6 (2013): Vol 25 Issue 6
Abstract
Cr-Doped GaN nanowires were fabricated using a chemical vapour deposition method. The structures, morphologies and compositions of the products have been characterized by powder X-ray diffraction, transmission electron microscopy, selected area electron diffraction and energy dispersive X-ray analysis. Results revealed that the obtained nanowires are single-crystal GaN with hexagonal wurtzite structure. TEM images show two different morphologies, the bent and the very straight nanostructures. The optical property of Cr-doped GaN was observed in the photoluminescence spectra, which shows the as-prepared product emits a strong UV light emission at 395 nm and a yellow luminescence at 580 nm (lex = 325 nm).
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- L.S. Yu, Y.W. Ma and Z. Hu, J. Crystal Growth, 310, 5237 (2008).
- X.T. Zhou, T.K. Shan and Y.Y. Shan, J. Appl. Phys., 97, 104315 (2005).
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- L.C. Chen, J.Y. Peng and Y.F. Chen, J. Am. Chem. Soc., 123, 2791 (2001).
- X.M. Cai, A.B. Djurišic and M.H. Xie, Thin Solid Films, 515, 984 (2006).
- X.Z. Wang, G.H. Yua and C.T. Lin, Solid State Commun., 150, 168 (2010).
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- L.G. Gai, H.H. Jiang and Y. Wan, J. Phys. Chem. C, 111, 2386 (2007).
- Robert A. Burke and R. Daniel, J. Crystal Growth, 311, 3409 (2009).
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- M. Souissi,A. Bchetnia and B.E. Jani, J. Crystal Growth, 277, 57 (2005).
- A.S. Otzlera and M. Deichera, Physica B, 340-342, 377 (2003).
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- R.Y. Korotkov, M.A. Reshchikov and B.W. Wessels, Physica B, 273- 274, 80 (1999).
References
L.S. Yu, Y.W. Ma and Z. Hu, J. Crystal Growth, 310, 5237 (2008).
X.T. Zhou, T.K. Shan and Y.Y. Shan, J. Appl. Phys., 97, 104315 (2005).
C.Y. Nam, D. Tham and J.E. Fischer, Appl. Phys. Lett., 85, 5676 (2004).
C.C. Chen, C.C. Yeh, C.H. Chen, M.Y. Yu, H.L. Liu, J.J. Wu, K.H. Chen,
L.C. Chen, J.Y. Peng and Y.F. Chen, J. Am. Chem. Soc., 123, 2791 (2001).
X.M. Cai, A.B. Djurišic and M.H. Xie, Thin Solid Films, 515, 984 (2006).
X.Z. Wang, G.H. Yua and C.T. Lin, Solid State Commun., 150, 168 (2010).
B. Liu, R. Zhang and Z.L. Xie, J. Crystal Growth, 310, 4499 (2008).
L.G. Gai, H.H. Jiang and Y. Wan, J. Phys. Chem. C, 111, 2386 (2007).
Robert A. Burke and R. Daniel, J. Crystal Growth, 311, 3409 (2009).
F. Shi, D.D. Zhang and C.S. Xue, Mater. Sci. Eng. B, 167, 80 (2010).
M. Souissi,A. Bchetnia and B.E. Jani, J. Crystal Growth, 277, 57 (2005).
A.S. Otzlera and M. Deichera, Physica B, 340-342, 377 (2003).
G.P. Das, B.K. Rao and P. Jena, Phys. Rev. B, 68, 035207 (2003).
G.P. Das, B.K. Rao and P. Jena, Phys. Rev. B, 69, 214422 (2004).
B. 2004, Phys. Rev. B, 10, 676 (1974).
R.A. Burke, D.R. Lamborn, X.J. Weng and J.M. Redwing, J. Crystal Growth, 311, 3409 (2009).
R.Y. Korotkov, M.A. Reshchikov and B.W. Wessels, Physica B, 273- 274, 80 (1999).