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Vol. 35 No. 9 (2023): Vol 35 Issue 9, 2023

Copyright (c) 2023 Viswanath R. N., Anil Kumar Behara, Tom Mathews

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This work is licensed under a Creative Commons Attribution 4.0 International License.

Effect of H2O2 Concentration on Morphology, Reflectivity and Wettability of Si Nanowalls Prepared by Metal Assisted Chemical Etching

https://doi.org/10.14233/ajchem.2023.28099
Anil Kumar Behara
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam-603102, India Department of Physics, Government Autonomous College, Angul-759143, India
https://orcid.org/0000-0003-0266-265X
Viswanath R. N.
Centre for Nanotechnology Research, Department of Humanities and Science, Aarupadai Veedu Institute of Technology, Vinayaka Mission’s Research Foundation (DU), Chennai-603104, India
https://orcid.org/0000-0002-6772-7672
Tom Mathews
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam-603102, India
https://orcid.org/0000-0002-4876-8524

Corresponding Author(s) : Viswanath R. N.

rnviswanath@avit.ac.in

Asian Journal of Chemistry, Vol. 35 No. 9 (2023): Vol 35 Issue 9, 2023

Abstract

A facile and low cost method, metal assisted chemical etching was used to prepare silicon (Si) nanowalls atop the Si wafer, where the  effect of etchant solution concentration (H2O2 concentration) on the morphology, reflectivity and wettability of the fabricated Si nanowalls is investigated. The morphological and structural studies by scanning and transmission electron microscopy revealed the Si  nanowalls prepared at both low and high H2O2 concentration are smooth, nonporous and single crystalline, where the increase of  H2O2 concentration only changes the morphology from isolated nanowall structure to agglomerated nanowall structure. The height of nanowalls also increases with increase in H2O2 concentration and follows a linear behaviour with an etching rate of 5697 nm/M.  The reflectance study shows that the reflectance is extremely low over broad wavelength range (300-1100 nm) for Si nanowalls,  compared to that of planar Si wafer. The increase of H2O2 concentration significantly changes the wavelength dependence of the  reflectance spectrum. The wettability studies show that SiNWs prepared at low H2O2 concentration exhibit hydrophobicity in contrast  to the hydrophilicity of planar Si wafer, where the increase of H2O2 concentration to very high value changes the hydrophobicity of SiNWs to hydrophilicity as similar to planar Si wafer.

Keywords

Silicon nanowalls Metal assisted chemical etching Morphology Reflectivity Wettability
Behara, A. K., R. N., V., & Mathews, T. (2023). Effect of H2O2 Concentration on Morphology, Reflectivity and Wettability of Si Nanowalls Prepared by Metal Assisted Chemical Etching. Asian Journal of Chemistry, 35(9), 2203–2209. https://doi.org/10.14233/ajchem.2023.28099
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