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Vol. 34 No. 6 (2022): Vol 34 Issue 6

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Photoelectrochemical Efficiency Applications of Antimony-doped Tin Oxide Thin Film by Thermal Evaporation Technique

https://doi.org/10.14233/ajchem.2022.23713
P. Mohamed Anwar
Department of Physics, Jamal Mohamed College (Autonomous), (Affiliated to Bharathidasan University), Thiruchirappalli-620 020, India
S. Muruganantham
Department of Physics, National College (Autonomous), (Affiliated to Bharathidasan University), Thiruchirappalli-620001, India
M. Ismail Fathima3
1Department of Physics, Jamal Mohamed College (Autonomous), (Affiliated to Bharathidasan University), Thiruchirappalli-620 020, India 2Department of Physics, National College (Autonomous), (Affiliated to Bharathidasan University), Thiruchirappalli-620001, India 3Department of Physics, Mangayarkarasi College of Arts and Science for Women (Affiliated to Madurai Kamaraj University), Paravai, Kanmai-625402, India 4Department of Physics, Khadir Mohideen College (Affiliated to Bharathidasan University, Thiruchirappalli), Adirampattinam-614701, India 5Department of Material Science, Central University of Tamil Nadu, Thiruvarur-610001, India 6Film Device Fabrication Characterization and Application FDFCA Research Group, USTOMB, 31130 Oran, Algeria 7Physics Faculty, USTOMB University POBOX 1505 31130, Mnaouer Oran, Algeria 8UNESCO-UNISA Africa Chair in Nanoscience’s Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P.O. Box 392, Pretoria, South Africa 9Nanosciences African network (NANOAFNET), Materials Research Group (MRG), iThemba LABS-National Research Foundation (NRF), 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province, South Africa *Corresponding author: E-mail: ayeshamariamkmc@gmail.com
A. Ayeshamariam
Department of Physics, Khadir Mohideen College (Affiliated to Bharathidasan University, Thiruchirappalli), Adirampattinam-614701, India
S. Beer Mohamed
Department of Material Science, Central University of Tamil Nadu, Thiruvarur-610001, India
M. Benhaliliba
Film Device Fabrication Characterization and Application FDFCA Research Group, USTOMB, 31130 Oran, Algeria ; Physics Faculty, USTOMB University POBOX 1505 31130, Mnaouer Oran, Algeria
K. Kaviyarasu
UNESCO-UNISA Africa Chair in Nanoscience’s Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P.O. Box 392, Pretoria, South Africa ; Nanosciences African network (NANOAFNET), Materials Research Group (MRG), iThemba LABS-National Research Foundation (NRF), 1 Old Faure Road, 7129, P O Box 722, Somerset West, Western Cape Province, South Africa

Corresponding Author(s) : A. Ayeshamariam

ayeshamariamkmc@gmail.com

Asian Journal of Chemistry, Vol. 34 No. 6 (2022): Vol 34 Issue 6

Abstract

Antimony-doped tin oxide (ATO) Sb–SnO2 has been prepared by thermal evaporation technique on indium tin oxide (ITO) glass substrate. The prepared ATO thin film was characterized by X-ray diffraction technique (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDAX), UV-vis’s spectrometer, Fourier transform infrared spectroscopy (FTIR) and photoluminescence studies (PLS) at room temperature, 250 and 500 ºC. Furthermore, the as-fabricated ATO/indium tin oxide device was subjected to electrical measurements, was determined at room temperature and 500 ºC without etching, chemical etching and photoetching processes. Post-treatment, such as annealing and etching, electrochemical photocurrent results showed that the maximum photoelectrochemical performance without etching at 500 ºC of the PEC cell.

Keywords

Photoelectrochemical Efficiency Antimony Tin oxide Thin film Thermal evaporation technique
Mohamed Anwar, P., Muruganantham, S., Ismail Fathima3, M., Ayeshamariam, A., Beer Mohamed, S., Benhaliliba, M., & Kaviyarasu, K. (2022). Photoelectrochemical Efficiency Applications of Antimony-doped Tin Oxide Thin Film by Thermal Evaporation Technique. Asian Journal of Chemistry, 34(6), 1537–1542. https://doi.org/10.14233/ajchem.2022.23713
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References
  1. E. Shanthi, V. Dutta, A. Banerjee and K.L. Chopra, J. Appl. Phys., 51, 6243 (1980); https://doi.org/10.1063/1.327610
  2. G. Jain and R. Kumar, Opt. Mater., 26, 27 (2004); https://doi.org/10.1016/j.optmat.2003.12.006
  3. S. Shanthi, C. Subramanian and P. Ramasamy, Cryst. Res. Technol., 34, 1037 (1999); https://doi.org/10.1002/(SICI)1521-4079(199909)34:8<1037::AIDCRAT1037>3.0.CO;2-J
  4. H. Kaneko and K. Miyake, J. Appl. Phys., 53, 3629 (1982); https://doi.org/10.1063/1.331144
  5. K. Ravichandran and P. Philominathan, Mater. Lett., 62, 2980 (2008); https://doi.org/10.1016/j.matlet.2008.01.119
  6. L. Lili, M. Liming and D. Xuechen, Mater. Res. Bull., 41, 541 (2006); https://doi.org/10.1016/j.materresbull.2005.09.011
  7. J.-B. Han, H.-J. Zhou and Q.-Q. Wang, Mater. Lett., 60, 252 (2006); https://doi.org/10.1016/j.matlet.2005.08.032
  8. J. Ma, Y. Wang, F. Ji, X. Yu and H. Ma, Mater. Lett., 59, 2142 (2005); https://doi.org/10.1016/j.matlet.2005.02.049.
  9. K.y. Rajpure and C.H. Bhosale, Mater. Chem. Phys., 63, 263 (2000); https://doi.org/10.1016/S0254-0584(99)00233-3
  10. Y. Hu, H. Zhang and H. Yang, J. Alloys Compd., 453, 292 (2008); https://doi.org/10.1016/j.jallcom.2006.11.062
  11. J. Lee, Thin Solid Films, 516, 1386 (2008); https://doi.org/10.1016/j.tsf.2007.05.027
  12. M.R.S. Castro, P.W. Oliveira and H.K. Schmidt, Semicond. Sci. Technol., 23, 035013 (2008); https://doi.org/10.1088/0268-1242/23/3/035013
  13. J.P. Coleman, J.J. Freeman, P. Madhukar and J.H. Wagenknecht, Displays, 20, 145 (1999); https://doi.org/10.1016/S0141-9382(99)00016-5
  14. Y.-H. Wong S. Cheng, K.Y. Chan and X.Y. Li, J. Electrochem. Soc., 152, D197 (2005); https://doi.org/10.1149/1.2041007
  15. E.R. Leite, M.I.B. Bernardi, E. Longo, J.A. Varela and C.A. Paskocimas, Thin Solid Films, 449, 67 (2004); https://doi.org/10.1016/j.tsf.2003.10.101
  16. M. Acciarri, S. Binetti, A. Le Donne, B. Lorenzi, L. Caccamo, L. Miglio, R. Moneta, S. Marchionna and M. Meschia, Cryst. Res. Technol., 46, 871 (2011); https://doi.org/10.1002/crat.201000670
  17. A.P. Rizzato, C.V. Santilli, S.H. Pulcinelli and A.F. Craievich, J. Appl. Cryst., 36, 736 (2003); https://doi.org/10.1107/S0021889803004953
  18. R. Ramarajan, M. Kovendhan, K. Thangaraju, D.P. Joseph and R.R. Babu, Appl. Surf. Sci., 487, 1385 (2019); https://doi.org/10.1016/j.apsusc.2019.05.079
  19. T.Y. Lim, C.Y. Kim, B.S. Kim, B.G. Choi and K. Shim, J. Mater. Sci. Mater. Electron., 16, 71 (2005); https://doi.org/10.1007/s10854-005-6453-4
  20. T. Jintakosol, Appl. Mechan. Mater., 749, 141 (2015); https://doi.org/10.4028/www.scientific.net/AMM.749.141
  21. L. Zhao, D.L. Zhang, G. Du, J.M. Xu and D.X. Zhou, Mater. Trans. Tech., 280, 831 (2005).
  22. G. Bhatia, V.K. Gupta, M.M. Patidar, S.B. Srivasatava, D. Singh, M. Gangrade and V. Ganesan, AIP Conf. Proc., 1953, 100084 (2018); https://doi.org/10.1063/1.5033020
  23. H. Kim and A. Pique, Appl. Phys. Lett., 84, 218 (2004); https://doi.org/10.1063/1.1639515
  24. Y. Hu and S.H. Hou, Mater. Chem. Phys., 86, 21 (2004); https://doi.org/10.1016/j.matchemphys.2004.01.039
  25. H.-R. An, C.Y. Kim, S.-T. Oh and H.-J. Ahn, Ceram. Int., 40, 385 (2014); https://doi.org/10.1016/j.ceramint.2013.06.013
  26. V. Stambouli, M. Labeau, I. Matko, B. Chenevier, O. Renault, C. Guiducci, P. Chaudouët, H. Roussel, D. Nibkin and E. Dupuis, Sens. Actuators B Chem., 113, 1025 (2006); https://doi.org/10.1016/j.snb.2005.03.108
  27. A.A. Alsac, A. Yildiz, T. Serin and N. Serin, J. Appl. Phys., 113, 063701 (2013); https://doi.org/10.1063/1.4790879
  28. A. Ayeshamariam, C. Sanjeeviraja and R.P. Samy, J. Photonics Spintronics, 2, 4 (2013).
  29. G. Hodes, D. Cahen and J. Manassen, Nature, 260, 312 (1976); https://doi.org/10.1038/260312a0
  30. B.D. James, G.N. Baum, J. Perez and K.N. Baum, Technoeconomic Analysis of Photoelectrochemical (PEC) Hydrogen Production. DOE Contract Number: GS-10F-009J (2009).
  31. W.W. Zhao, J.J. Xu and H.Y. Chen, Anal. Chem., 90, 615 (2018); https://doi.org/10.1021/acs.analchem.7b04672
  32. K. Rajeshwar, J. Appl. Electrochem., 25, 1067 (1995); https://doi.org/10.1007/BF00242533
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