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Vol. 31 No. 12 (2019): Vol 31 Issue 12

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Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour

https://doi.org/10.14233/ajchem.2019.22143
E. Shoba
Department of Electronics, Research and Development Centre, Erode Arts and Science College (Autonomous), Erode-638009, India
N. Pasupathy
Department of Electronics, Research and Development Centre, Erode Arts and Science College (Autonomous), Erode-638009, India
P. Thirunavukkarasu
Department of Electronics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore-641020, India
J. Chandrasekaran
Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore-641020, India
G. Parthasarathy
Department of Electronics and Communication System, Sri Krishna Arts and Science College, Coimbatore-641008, India

Corresponding Author(s) : E. Shoba

shobarajendranidp@gmail.com; shobarajendranidp@gmail.com

Asian Journal of Chemistry, Vol. 31 No. 12 (2019): Vol 31 Issue 12

Abstract

The interfacial layer of pristine polyaniline (PANI) polymer was prepared using chemical oxidative method with 0.2 M concentration formerly, aniline hydrochloride was oxidized with ammonium peroxydisulfate 0.25 M in aqueous medium at 1-2 ºC next to aniline, stirring time and polymerization temperature are considerable causing parameters of polymerization reaction, harmoniously metal polymer- semiconductor (MPS) constructions of Cu/PANI/n-Si Schottky barrier diodes with different acids (HCl, acetic acid, nitric acid and sulfuric acid) was fabricated. The structural analyses of XRD sizes of the elements revealed that the crystal structure of distortion and converted into amorphous nature and SEM revealed that the morphology of pristine PANI powders. The FT-IR spectra confirmed that ammonium peroxydisulfate with pristine PANI along with band formation. The optical property of PANI was analyzed using UV-vis spectra and deliberate with minimum band gap 3.1 eV by means of HCl. The electrical property I -V temperature ranges 30 to 120 ºC represents that the maximum average conductivity obtains as 0.70 × 10-2 S/cm for 0.2 M HCl. The lowest ideality factor (n) and minimum barrier height (ΦB) values were achieved for HCl of Cu/PANI/n-Si Schottky barrier diode (SBDs) under the explanation disorder.

Keywords

PANI Chemical oxidative method Bandgap Electrical property Schottky barrier diode
Shoba, E., Pasupathy, N., Thirunavukkarasu, P., Chandrasekaran, J., & Parthasarathy, G. (2019). Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour. Asian Journal of Chemistry, 31(12), 2846–2854. https://doi.org/10.14233/ajchem.2019.22143
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