A Comparative Study of CMOS and Carbon Nanotube Field Effect Transistor Based Inverter at 32 nm Technology Node

Abstract

Carbon nanotube field effect transistor is emerging as new promising device for future nanotechnology solutions. It utilizes semiconducting carbon nanotube as its channel whose quasi 1-D structure provides high mobility for near ballistic transport and better electrostatic control. In this paper we have designed a basic inverter circuit using carbon nanotube field effect transistor. The key performances of inverter such as noise margin, average power and delay time are analyzed and compared with CMOS inverter. Both the inverters are simulated in HSPICE platform. The simulated results of carbon nanotube field effect transistor inverter shows improved performance in terms of noise margin, power and delay time than CMOS inverter.