Modeling and Performance Analysis of Graphene Field Effect Transistor

Abstract

This paper presents a physics-based model and characteristics of drain current, field, velocity, electron density with variation of channel length of graphene and equivalent capacitive circuit model of field-effect transistors. Depending on drift-diffusion carrier transport and saturation velocity effects, the field effect transistor model has been designed. First, an explicit model has been derived for the drain current. These models have been simulated and the results obtained are in excellent agreement with the theoretical calculations.