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Vol 25 No Supplementary Issue

On Simulation of Single Electron Transistor

A. Jain*
Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032, India *Corresponding author: Fax: +91 33 24572404; Tel: +91 33 24572404; E-mail: amit2_8@yahoo.co.in
A. Ghosh
Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032, India *Corresponding author: Fax: +91 33 24572404; Tel: +91 33 24572404; E-mail: amit2_8@yahoo.co.in
S.K. Sarkar
Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032, India *Corresponding author: Fax: +91 33 24572404; Tel: +91 33 24572404; E-mail: amit2_8@yahoo.co.in

Corresponding Author(s) : A. Jain*

Asian Journal of Chemistry, Vol 25 No Supplementary Issue

Abstract

To explore the single electronics technology efficiently we need a proper simulation environment. In this paper we have investigated three basic simulation methodologies of single electron transistor i.e., Monte carlo, Master equation and spice macro modeling. Basically the analytical modeling of single electron transistors is based on orthodox theory of single electron tunneling. Here we have compared the simulation results of V-I characteristics of single electron transistor obtained from analytical modeling, macro modeling and Monte carlo method.

Keywords

Single electron transistor Macro model SIMON MIB model Monte carlo method Coulomb oscillation.
Jain*, A., Ghosh, A., & Sarkar, S. (2013). On Simulation of Single Electron Transistor. Asian Journal of Chemistry, 25(20), 409–410. Retrieved from https://asianpubs.org/index.php/ajchem/article/view/25_Supplementary%20Issue_113
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