Morphological and Optical Investigation of Pure and Triethylamine Modified ZnS
R. Annie Sujatha1
1Department of Physics and Nano Technology, Center for Materials Science and Nanodevices, SRM University, Kattankulathur-603 203, India
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
3Department of Physics, Thanthai Hans Roever College, Elambalur, Perambalur-621 212, India
*Corresponding author: E-mail: anniesujatha@gmail.com
M. Navaneethan2
1Department of Physics and Nano Technology, Center for Materials Science and Nanodevices, SRM University, Kattankulathur-603 203, India
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
3Department of Physics, Thanthai Hans Roever College, Elambalur, Perambalur-621 212, India
*Corresponding author: E-mail: anniesujatha@gmail.com
P. Joseph Stalin3
1Department of Physics and Nano Technology, Center for Materials Science and Nanodevices, SRM University, Kattankulathur-603 203, India
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
3Department of Physics, Thanthai Hans Roever College, Elambalur, Perambalur-621 212, India
*Corresponding author: E-mail: anniesujatha@gmail.com
C. Muthamizhchelvan1
1Department of Physics and Nano Technology, Center for Materials Science and Nanodevices, SRM University, Kattankulathur-603 203, India
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
3Department of Physics, Thanthai Hans Roever College, Elambalur, Perambalur-621 212, India
*Corresponding author: E-mail: anniesujatha@gmail.com
Y. Hayakawa2
1Department of Physics and Nano Technology, Center for Materials Science and Nanodevices, SRM University, Kattankulathur-603 203, India
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
3Department of Physics, Thanthai Hans Roever College, Elambalur, Perambalur-621 212, India
*Corresponding author: E-mail: anniesujatha@gmail.com
Corresponding Author(s) : R. Annie Sujatha1
Asian Journal of Chemistry,
Vol 25 No Supplementary Issue
Semiconductor nanoparticles are promising candidates for optoelectronic devices, sensors and display devices due to their size dependent unique properties which can be varied. ZnS a class of wide bandgap II-IV semiconductor (3.65 eV) is a novel class of luminescent material that exhibits excellent physical and chemical properties when reduced to nanodimensions. A facile chemical route of synthesis of pure ZnS and triethylamine capped ZnS is reported. The structural and phase information is obtained from XRD studies. The optical properties of the prepared samples were measured using UV-VIS and photoluminescence spectroscopies. The UV-VIS studies shows a blue shift compared to its bulk counterpart. The photoluminescence signal intensities of doped ZnS shows enhancement compared to undoped samples. The FTIR studies confirm the presence of triethylamine in the synthesized product. The HRTEM images shows sheet like morphology when doped with triethylamine. In this paper we report a general strategy for the synthesis of functional nanomaterials.
Keywords
MorphologyOptical propertiesTriethylamineZnS.
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Annie Sujatha1, R., Navaneethan2, M., Joseph Stalin3, P., Muthamizhchelvan1, C., & Hayakawa2, Y. (2013). Morphological and Optical Investigation of Pure and Triethylamine Modified ZnS. Asian Journal of Chemistry, 25(20), 129–132. Retrieved from https://asianpubs.org/index.php/ajchem/article/view/25_Supplementary%20Issue_34