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Vol. 28 No. 6 (2016): Vol 28 Issue 6

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Differential Inelastic Scattering Cross-Section of Silicon and Gallium Arsenide Semiconductor Crystals

https://doi.org/10.14233/ajchem.2016.19823
H. Kabil
Department of Physics, Faculty of Arts and Sciences, Recep Tayyip Erdogan University, 53100 Rize, Turkey
E. Sakar
Department of Physics, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey
A. Meral
Department of Physics, Faculty of Arts and Sciences, Recep Tayyip Erdogan University, 53100 Rize, Turkey
M. Sahin
Department of Physics, Faculty of Arts and Sciences, Recep Tayyip Erdogan University, 53100 Rize, Turkey
A. Gürol
Department of Physics, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey

Corresponding Author(s) : E. Sakar

erdem@atauni.edu.tr

Asian Journal of Chemistry, Vol. 28 No. 6 (2016): Vol 28 Issue 6

Abstract

Because of the extensive usage of silicon and gallium arsenide semiconductor crystals, the differential inelastic scattering cross-sections at 59.5 keV have been measured for various scattering angles changing from 120 to 150 degrees by using an energy dispersive X-ray fluorescence spectrometer. The spectrometer includes an Am-241 radio isotopes as photon source and a Si(Li) detector. Experimental results of differential inelastic scattering cross-sections compared with theoretical results. We found a good agreement between experimental and theoretical values in the standard uncertainties. To our best of knowledge, these results are first data in the differential inelastic scattering cross-sections of silicon and gallium arsenide crystals.

Keywords

Differential inelastic scattering cross sections Semiconductors Crystal structure
Kabil, H., Sakar, E., Meral, A., Sahin, M., & Gürol, A. (2016). Differential Inelastic Scattering Cross-Section of Silicon and Gallium Arsenide Semiconductor Crystals. Asian Journal of Chemistry, 28(6), 1389–1392. https://doi.org/10.14233/ajchem.2016.19823
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