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Advanced Operation of Microcolumn by Introducing Misalign Corrector
Corresponding Author(s) : Youngchul Kim
Asian Journal of Chemistry,
Vol. 27 No. 11 (2015): Vol 27 Issue 11
Abstract
We introduced an advanced operation of a microcolumn to recover electron beam properties caused by electrodes misalign. The misalign corrector consists of a pair of electrodes and each electrode is divided by four even parts. We confirmed that by applying appropriate bias voltage to some parts of the corrector, electron beam trajectory could be adjusted. As a result, it is found that the corrector can be an useful electron unit to obtain fine electron beam properties.
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- T.H.P. Chang, D.P. Kern and M.A. McCord, J. Vac. Sci. Technol. B, 7, 1855 (1989); doi:10.1116/1.584680.
- E. Kratschmer, H.S. Kim, M.G.R. Thomson, K.Y. Lee, S.A. Rishton, M.L. Yu and T.H.P. Chang, J. Vac. Sci. Technol. B, 12, 3503 (1994); doi:10.1116/1.587459.
- Y.C. Kim, H.S. Kim, S.J. Ahn, H.W. Kim, T. Yoshimoto and D.W. Kim, J. Korean Phys. Soc., 49, 1428 (2006); doi:10.3938/jkps.49.1428.
- D.A. Crewe, D.C. Perng, S.E. Shoaf and A.D. Feinerman, J. Vac. Sci. Technol. B, 10, 2754 (1992); doi:10.1116/1.585996.
- T.H.P. Chang, M.G.R. Thomson, E. Kratschmer, H.S. Kim, M.L. Yu, K.Y. Lee, S.A. Rishton, B.W. Hussey and S. Zolgharnain, J. Vac. Sci. Technol. B, 14, 3774 (1996); doi:10.1116/1.588666.
- H.S. Kim, D.W. Kim, S.J. Ahn, Y.C. Kim, S.S. Park, K.W. Park, N.W. Hwang, S.W. Jin and S.Y. Bae, Microelectron. Eng., 85, 782 (2008); doi:10.1016/j.mee.2007.12.042.
- T.S. Oh, D.W. Kim, Y.C. Kim, S. Ahn, G. Lee and H.S. Kim, J. Vac. Sci. Technol. B, 28, C6C69 (2010); doi:10.1116/1.3502658.
- T.S. Oh, D.W. Kim, S. Ahn, Y.C. Kim, H.-S. Kim and S.J. Ahn, J. Vac. Sci. Technol. A, 26, 1443 (2008); doi:10.1116/1.2987949.
- W.K. Jang, J. Photocatal. Sci., 3, 107 (2012).
- S. Ahn, D.-W. Kim, H.S. Kim, S.J. Ahn and J. Cho, Microelectron. Eng., 69, 57 (2003); doi:10.1016/S0167-9317(03)00229-6.
- S.S. Park, D.W. Kim, S. Ahn, Y.C. Kim, S.K. Choi, D.Y. Kim and H.S. Kim, Jpn. J. Appl. Phys., 43(6B), 3986 (2004); doi:10.1143/JJAP.43.3986.
- T.-S. Oh, S.W. Jin, S.K. Choi, Y.C. Kim and D.-W. Kim, S.-J. Ahn, Y.-B. Lee and H.-S. Kim, J. Opt. Soc. Korea, 15, 368 (2011).
References
T.H.P. Chang, D.P. Kern and M.A. McCord, J. Vac. Sci. Technol. B, 7, 1855 (1989); doi:10.1116/1.584680.
E. Kratschmer, H.S. Kim, M.G.R. Thomson, K.Y. Lee, S.A. Rishton, M.L. Yu and T.H.P. Chang, J. Vac. Sci. Technol. B, 12, 3503 (1994); doi:10.1116/1.587459.
Y.C. Kim, H.S. Kim, S.J. Ahn, H.W. Kim, T. Yoshimoto and D.W. Kim, J. Korean Phys. Soc., 49, 1428 (2006); doi:10.3938/jkps.49.1428.
D.A. Crewe, D.C. Perng, S.E. Shoaf and A.D. Feinerman, J. Vac. Sci. Technol. B, 10, 2754 (1992); doi:10.1116/1.585996.
T.H.P. Chang, M.G.R. Thomson, E. Kratschmer, H.S. Kim, M.L. Yu, K.Y. Lee, S.A. Rishton, B.W. Hussey and S. Zolgharnain, J. Vac. Sci. Technol. B, 14, 3774 (1996); doi:10.1116/1.588666.
H.S. Kim, D.W. Kim, S.J. Ahn, Y.C. Kim, S.S. Park, K.W. Park, N.W. Hwang, S.W. Jin and S.Y. Bae, Microelectron. Eng., 85, 782 (2008); doi:10.1016/j.mee.2007.12.042.
T.S. Oh, D.W. Kim, Y.C. Kim, S. Ahn, G. Lee and H.S. Kim, J. Vac. Sci. Technol. B, 28, C6C69 (2010); doi:10.1116/1.3502658.
T.S. Oh, D.W. Kim, S. Ahn, Y.C. Kim, H.-S. Kim and S.J. Ahn, J. Vac. Sci. Technol. A, 26, 1443 (2008); doi:10.1116/1.2987949.
W.K. Jang, J. Photocatal. Sci., 3, 107 (2012).
S. Ahn, D.-W. Kim, H.S. Kim, S.J. Ahn and J. Cho, Microelectron. Eng., 69, 57 (2003); doi:10.1016/S0167-9317(03)00229-6.
S.S. Park, D.W. Kim, S. Ahn, Y.C. Kim, S.K. Choi, D.Y. Kim and H.S. Kim, Jpn. J. Appl. Phys., 43(6B), 3986 (2004); doi:10.1143/JJAP.43.3986.
T.-S. Oh, S.W. Jin, S.K. Choi, Y.C. Kim and D.-W. Kim, S.-J. Ahn, Y.-B. Lee and H.-S. Kim, J. Opt. Soc. Korea, 15, 368 (2011).