Issue

Vol. 27 No. 10 (2015): Vol 27 Issue 10

Copyright (c) 2015 AJC

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Scanning Electron Microscopy Study of Surface Morphology of Ni3Pb2S2 Thin Films

https://doi.org/10.14233/ajchem.2015.19013
Ho Soonmin
Faculty of Science, Technology, Engineering and Mathematics, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia

Corresponding Author(s) : Ho Soonmin

soonmin.ho@newinti.edu.my

Asian Journal of Chemistry, Vol. 27 No. 10 (2015): Vol 27 Issue 10

Abstract

Ni3Pb2S2 thin films have been prepared using a simple and economical chemical bath deposition method. These films were produced from aqueous solutions in the presence of complexing agent. The morphologies of Ni3Pb2S2 films were characterized using scanning electron microscopy. Scanning electron microscopy micrographs revealed that there are many various morphologies were obtained on the films deposited under various deposition conditions such as pH, deposition time and bath temperature.

Keywords

Thin films Chemical bath deposition Scanning electron microscopy
Soonmin, H. (2015). Scanning Electron Microscopy Study of Surface Morphology of Ni3Pb2S2 Thin Films. Asian Journal of Chemistry, 27(10), 3851–3853. https://doi.org/10.14233/ajchem.2015.19013
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. R.M. Mane, V.B. Ghanwat, V.V. Kondalkar, K.V. Khot, S.R. Mane, P.S. Patil and P.N. Bhosale, Procedia Mater. Sci., 6, 1285 (2014); doi:10.1016/j.mspro.2014.07.203.
  2. F. Di Benedetto, I. Bencistà, S. Caporali, S. Cinotti, A. De Luca, A. Lavacchi, F. Vizza, M. Muniz Miranda, M.L. Foresti and M. Innocenti, Prog. Photovolt. Res. Appl., 22, 97 (2014); doi:10.1002/pip.2386.
  3. S. Chauhan and P. Rajaram, Sol. Energy Mater. Sol. Cells, 92, 550 (2008); doi:10.1016/j.solmat.2007.11.011.
  4. K. Anuar, Z. kuang, S. Atan, M.J. Haron, W.T. Tan and S.M. Ho, Arab J. Sci. Eng, 35, 83 (2009).
  5. M.T. Neshkova, V.D. Nikolova, A.M. Bond and V. Petrov, Electrochim. Acta, 50, 5606 (2005); doi:10.1016/j.electacta.2005.03.039.
  6. C. Vijayan, M. Pandiaraman, N. Soundararajan, P. Gnanadurai and R. Chandramohan Int. J. ChemTech. Res., 6, 3343 (2014).
  7. Z.H. Su, K.W. Sun, Z.L. Han, F.Y. Liu, Y.Q. Lai, J. Li and Y.X. Liu, J. Mater. Chem., 22, 16346 (2012); doi:10.1039/c2jm31669b.
  8. S. Rajathi, N. Sankarasubramanian, K. Ramanathan and M. Senthamizhselvi, Chalcogenide Lett., 9, 495 (2012).
  9. M. Adelifard, M.M. Bagheri Mohagheghi and H. Eshghi, Phys. Scr., 85, 35603 (2012); doi:10.1088/0031-8949/85/03/035603.
  10. S.P. Yadav, P.S. Shinde, K.Y. Rajpure and C.H. Bhosale, Sol. Energy Mater. Sol. Cells, 92, 453 (2008); doi:10.1016/j.solmat.2007.10.008.
  11. L.X. Shao, K.H. Chang and H.L. Hwang, Mater. Sci. Semicond. Process., 6, 397 (2003); doi:10.1016/j.mssp.2003.05.016.
  12. C.I. Oriaku, F.I. Ezema and J.C. Osuwa, Pacific J. Sci. Technol., 10, 413 (2008).
  13. L.H. Lin, C.C. Wu, C.H. Lai and T.C. Lee, Chem. Mater., 20, 4475 (2008); doi:10.1021/cm702081h.
  14. H. Soonmin, Oriental J. Chem., 30, 1009 (2014); doi:10.13005/ojc/300311.
  15. M.C. Orori, N.N. Walter and O. John, J. Chem. Mater. Sci., 2, 13 (2014).
  16. I.E. Ottih, Adv. Appl. Sci. Res., 4, 5 (2013).
  17. M.A. Mohammed, A.M. Mousa and J.P. Ponpon, J. Semicond. Technol. Sci., 9, 117 (2009); doi:10.5573/JSTS.2009.9.2.117.
  18. K.E. Suryavanshi, R.B. Dhake, A.M. Patil, D.R. Patil and M.S. Wagh, Int. J. Adv. Res., 2, 491 (2014).
  19. S.C. Ezugwu, F.I. Ezema and P.U. Asogwa, Chalcogenide Lett., 7, 341 (2010).
Read More
Author biographies is not available.
Download
PDF
Statistic
Read Counter : 0 Download : 0