Copyright (c) 2014 AJC
This work is licensed under a Creative Commons Attribution 4.0 International License.
Preparation of Cu2O Superhydrophobic Film with Hierarchical Structure via the Facile Route
Asian Journal of Chemistry,
Vol. 26 No. 2 (2014): Vol 26 Issue 2
Abstract
A Cu2O layer was employed as a new method to achieve the superhydrophobicity on a copper surface using a simple hydrothermal method. First, a Cu2O layer with a hierarchical structure was grown on the copper surface using an oxidization step and it exhibited the hydrophilicity. The analysis results of XRD and XPS confirmed the formation of a Cu2O phase on the copper surface. Second, the Cu2O surface was changed to superhydrophobicity via a modifying process using 1H,1H,2H,2H-perfluorodecyltriethoxysilane. Peaks corresponding to F1s, -CH2, -CF2 and -CF3 groups in the XPS spectra confirm the assemblage of the F-contained radicals on the surface. The wetting mechanism is discussed briefly. Wetting tests also demonstrate that a water droplet on the surface can slide away very easily, even with only a slight tilt and that it has a lower adhesion to the modified surface.
Keywords
Download Citation
Endnote/Zotero/Mendeley (RIS)BibTeX
- T.L. Sun, L. Feng, X.F. Gao and L. Jiang, Acc. Chem. Res., 38, 644 (2005); doi:10.1021/ar040224c.
- J.D. Wang, A. Li, H.S. Chen and D.R. Chen, J. Bionic. Eng., 8,122 (2011); doi: 10.1016/S1672-6529(11)60022-X.
- X.X. Zhang, M. Honkanen, M. Järn, J. Peltonen, V. Pore, E. Levänen and T. Mäntylä, Appl. Surf. Sci., 254, 5129 (2008); doi:10.1016/j.apsusc.2008.02.053.
- X.Y. Ling, I.Y. Phang, G.J. Vancso, J. Huskens and D.N. Reinhoudt, Langmuir, 25, 3260 (2009); doi:10.1021/la8040715.
- Y. Zhao, S.J. Xie and Y.J. Jiang, Surf. Interface Anal., 44, 1360 (2012); doi:10.1002/sia.5034.
- Z.G. Guo, W.M. Liu and B.L. Su, Appl. Phys. Lett., 92, 063104 (2008); doi:10.1063/1.2841666.
- G.L. Song, S.D. Ma, G.Y. Tang and X.W. Wang, Colloid. Surf. A, 364, 99 (2010); doi:10.1016/j.colsurfa.2010.04.043.
- N.J. Shirtcliffe, G. McHale, M.I. Newton, G. Chabrol and C.C. Perry, Adv. Mater., 16, 1929 (2004); doi:10.1002/adma.200400315.
- J.M. Xi, L. Feng and L. Jiang, Appl. Phys. Lett., 92, 053102 (2008); doi:10.1063/1.2839403.
- X.H. Chen, L.H. Kong, D. Dong, G.B. Yang, L.G. Yu, J.M. Chen and P.Y. Zhang, J. Phys. Chem. C, 113, 5396 (2009); doi:10.1021/jp809616d.
- Z.G. Guo, W.M. Liu and B.L. Su, Appl. Phys. Lett., 92, 063104 (2008); doi:10.1063/1.2841666.
- Q.M. Pan, M. Wang and H.B. Wang, Appl. Surf. Sci., 254, 6002 (2008); doi:10.1016/j.apsusc.2008.03.034.
- A.O. Musa, T. Akomolafe and M.J. Carter, Sol. Energy Mater. Sol. Cells, 51, 305 (1998); doi: 10.1016/S0927-0248(97)00233-X.
- X. Li, H. Gao, C.J. Murphy and L. Gou, Nano Lett., 4, 1903 (2004); doi:10.1021/nl048941n.
- J.T. Zhang, J.F. Liu, Q. Peng, X. Wang and Y.D. Li, Chem. Mater., 18, 867 (2006);doi: 10.1021/cm052256f.
- L.F. Gou and C.J. Murphy, Nano Lett., 3, 231 (2003); doi:10.1021/nl0258776.
- M.H. Kim, B. Lim, E.P. Lee and Y. Xia, J. Mater. Chem., 18, 4069 (2008); doi:10.1039/b805913f.
- X.D. Liang, L. Gao, S.W. Yang and J. Sun, Adv. Mater., 21, 2068 (2009); doi:10.1002/adma.200802783.
- L.S. Xu, X.H. Chen, Y.R. Wu, C.S. Chen, W.H. Li, W.Y. Pan and Y. Wang, Nanotechnology, 17, 1501 (2006); doi:10.1088/0957-4484/17/5/056.
- S. Sahoo, S. Husale, B. Colwill, T.M. Lu, S. Nayak and P.M. Ajayan, ACS Nano, 3, 3935 (2009); doi:10.1021/nn900915m.
- E.W. Bohannan, M.G. Shumsky and J.A. Switzer, Chem. Mater., 11, 2289 (1999); doi:10.1021/cm990304o.
- A.D. Tang, Y. Xiao, J. Ouyang and S. Nie, J. Alloys Compd., 457, 447 (2008); doi:10.1016/j.jallcom.2007.02.148.
- H.W. Zhang, X. Zhang, H.Y. Li, Z.K. Qu, S. Fan and M.Y. Ji, Cryst. Growth Des., 7, 820 (2007); doi:10.1021/cg0607351.
- H.G. Zhang, Q.S. Zhu, Y. Wang, C.Y. Zhang and L. Tao, Mater. Lett., 61, 4508 (2007); doi:10.1016/j.matlet.2007.02.038.
- Y.Y. Xu, X.L. Jiao and D.R. Chen, J. Phys. Chem. C, 112, 16769 (2008); doi:10.1021/jp8058933.
- Y.M. Sui, W.Y. Fu, H.B. Yang, Y. Zeng, Y.Y. Zhang, Q. Zhao, Y.G. Li, X.M. Zhou, Y. Leng, M.H. Li and G.T. Zou, Cryst. Growth Des., 10, 99 (2010); doi:10.1021/cg900437x.
- D.F. Zhang, H. Zhang, L. Guo, K. Zheng, X.D. Han and Z. Zhang, J. Mater. Chem., 19, 5220 (2009); doi:10.1039/b816349a.
- C.-H. Kuo and M.H. Huang, Nano Today, 5, 106 (2010); doi:10.1016/j.nantod.2010.02.001.
- M.J. Siegfried and K.-S. Choi, Adv. Mater., 16, 1743 (2004); doi:10.1002/adma.200400177.
- K.H. Yoon, W.J. Choi and D.H. Kang, Thin Solid Films, 372, 250 (2000); doi:10.1016/S0040-6090(00)01058-0.
- W.Z. Wang, G.H. Wang, X.S. Wang, Y.J. Zhan, Y.K. Liu and C.L. Zheng, Adv. Mater., 14, 67 (2002); doi:10.1002/1521-4095(20020104)14:1<67::AID-ADMA67>3.0.CO;2-Z.
- J.J. Teo, Y. Chang and H.C. Zeng, Langmuir, 22, 7369 (2006); doi:10.1021/la060439q.
- X.F. Gao, X. Yao and L. Jiang, Langmuir, 23, 4886 (2007); doi:10.1021/la0630357.
References
T.L. Sun, L. Feng, X.F. Gao and L. Jiang, Acc. Chem. Res., 38, 644 (2005); doi:10.1021/ar040224c.
J.D. Wang, A. Li, H.S. Chen and D.R. Chen, J. Bionic. Eng., 8,122 (2011); doi: 10.1016/S1672-6529(11)60022-X.
X.X. Zhang, M. Honkanen, M. Järn, J. Peltonen, V. Pore, E. Levänen and T. Mäntylä, Appl. Surf. Sci., 254, 5129 (2008); doi:10.1016/j.apsusc.2008.02.053.
X.Y. Ling, I.Y. Phang, G.J. Vancso, J. Huskens and D.N. Reinhoudt, Langmuir, 25, 3260 (2009); doi:10.1021/la8040715.
Y. Zhao, S.J. Xie and Y.J. Jiang, Surf. Interface Anal., 44, 1360 (2012); doi:10.1002/sia.5034.
Z.G. Guo, W.M. Liu and B.L. Su, Appl. Phys. Lett., 92, 063104 (2008); doi:10.1063/1.2841666.
G.L. Song, S.D. Ma, G.Y. Tang and X.W. Wang, Colloid. Surf. A, 364, 99 (2010); doi:10.1016/j.colsurfa.2010.04.043.
N.J. Shirtcliffe, G. McHale, M.I. Newton, G. Chabrol and C.C. Perry, Adv. Mater., 16, 1929 (2004); doi:10.1002/adma.200400315.
J.M. Xi, L. Feng and L. Jiang, Appl. Phys. Lett., 92, 053102 (2008); doi:10.1063/1.2839403.
X.H. Chen, L.H. Kong, D. Dong, G.B. Yang, L.G. Yu, J.M. Chen and P.Y. Zhang, J. Phys. Chem. C, 113, 5396 (2009); doi:10.1021/jp809616d.
Z.G. Guo, W.M. Liu and B.L. Su, Appl. Phys. Lett., 92, 063104 (2008); doi:10.1063/1.2841666.
Q.M. Pan, M. Wang and H.B. Wang, Appl. Surf. Sci., 254, 6002 (2008); doi:10.1016/j.apsusc.2008.03.034.
A.O. Musa, T. Akomolafe and M.J. Carter, Sol. Energy Mater. Sol. Cells, 51, 305 (1998); doi: 10.1016/S0927-0248(97)00233-X.
X. Li, H. Gao, C.J. Murphy and L. Gou, Nano Lett., 4, 1903 (2004); doi:10.1021/nl048941n.
J.T. Zhang, J.F. Liu, Q. Peng, X. Wang and Y.D. Li, Chem. Mater., 18, 867 (2006);doi: 10.1021/cm052256f.
L.F. Gou and C.J. Murphy, Nano Lett., 3, 231 (2003); doi:10.1021/nl0258776.
M.H. Kim, B. Lim, E.P. Lee and Y. Xia, J. Mater. Chem., 18, 4069 (2008); doi:10.1039/b805913f.
X.D. Liang, L. Gao, S.W. Yang and J. Sun, Adv. Mater., 21, 2068 (2009); doi:10.1002/adma.200802783.
L.S. Xu, X.H. Chen, Y.R. Wu, C.S. Chen, W.H. Li, W.Y. Pan and Y. Wang, Nanotechnology, 17, 1501 (2006); doi:10.1088/0957-4484/17/5/056.
S. Sahoo, S. Husale, B. Colwill, T.M. Lu, S. Nayak and P.M. Ajayan, ACS Nano, 3, 3935 (2009); doi:10.1021/nn900915m.
E.W. Bohannan, M.G. Shumsky and J.A. Switzer, Chem. Mater., 11, 2289 (1999); doi:10.1021/cm990304o.
A.D. Tang, Y. Xiao, J. Ouyang and S. Nie, J. Alloys Compd., 457, 447 (2008); doi:10.1016/j.jallcom.2007.02.148.
H.W. Zhang, X. Zhang, H.Y. Li, Z.K. Qu, S. Fan and M.Y. Ji, Cryst. Growth Des., 7, 820 (2007); doi:10.1021/cg0607351.
H.G. Zhang, Q.S. Zhu, Y. Wang, C.Y. Zhang and L. Tao, Mater. Lett., 61, 4508 (2007); doi:10.1016/j.matlet.2007.02.038.
Y.Y. Xu, X.L. Jiao and D.R. Chen, J. Phys. Chem. C, 112, 16769 (2008); doi:10.1021/jp8058933.
Y.M. Sui, W.Y. Fu, H.B. Yang, Y. Zeng, Y.Y. Zhang, Q. Zhao, Y.G. Li, X.M. Zhou, Y. Leng, M.H. Li and G.T. Zou, Cryst. Growth Des., 10, 99 (2010); doi:10.1021/cg900437x.
D.F. Zhang, H. Zhang, L. Guo, K. Zheng, X.D. Han and Z. Zhang, J. Mater. Chem., 19, 5220 (2009); doi:10.1039/b816349a.
C.-H. Kuo and M.H. Huang, Nano Today, 5, 106 (2010); doi:10.1016/j.nantod.2010.02.001.
M.J. Siegfried and K.-S. Choi, Adv. Mater., 16, 1743 (2004); doi:10.1002/adma.200400177.
K.H. Yoon, W.J. Choi and D.H. Kang, Thin Solid Films, 372, 250 (2000); doi:10.1016/S0040-6090(00)01058-0.
W.Z. Wang, G.H. Wang, X.S. Wang, Y.J. Zhan, Y.K. Liu and C.L. Zheng, Adv. Mater., 14, 67 (2002); doi:10.1002/1521-4095(20020104)14:1<67::AID-ADMA67>3.0.CO;2-Z.
J.J. Teo, Y. Chang and H.C. Zeng, Langmuir, 22, 7369 (2006); doi:10.1021/la060439q.
X.F. Gao, X. Yao and L. Jiang, Langmuir, 23, 4886 (2007); doi:10.1021/la0630357.