Impurity-Dependent Nanoporous Structures of Anodic Aluminum Oxides

Chul Kyu Song; Dha-Hae Kim; Se-Na Jang; So-Yeon Yoo; Seung Hun Huh

doi:10.14233/ajchem.2014.17734

Issue

Vol. 26 No. 13 (2014): Vol 26 Issue 13

Issue Published : June 23, 2014

This work is licensed under a Creative Commons Attribution 4.0 International License.

Impurity-Dependent Nanoporous Structures of Anodic Aluminum Oxides

https://doi.org/10.14233/ajchem.2014.17734

Chul Kyu Song

Nanotechnology Convergence Lab, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;Department of Materials Science and Engineering, Korea University, Anam-dong, Seoul 136-713, Republic of Korea

Dha-Hae Kim

Nanotechnology Convergence Lab, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea

Se-Na Jang

Nanotechnology Convergence Lab, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea

So-Yeon Yoo

Nanotechnology Convergence Lab, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea

Seung Hun Huh

Nanotechnology Convergence Lab, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea;

Corresponding Author(s) : Seung Hun Huh

shhuh@kicet.re.kr

Asian Journal of Chemistry, Vol. 26 No. 13 (2014): Vol 26 Issue 13
Article Published : June 27, 2014

Abstract

With one-step anodizing, the highly nanoporous structures of anodic aluminum oxide were produced. The nanoporous structures were selectively formed in the combinatorial anodizing: (1) the low-purity aluminum and (2) phosphoric acid. The anodic aluminum oxide has unique structure with sprout-like surface, the main nanopores (180-210 nm) and the sub-nanopores at the bottom of main nanopores. This structure is explained by impurity model.

Keywords

Anodic aluminum oxide Nanopore Anodizing

Kyu Song, C., Kim, D.-H., Jang, S.-N., Yoo, S.-Y., & Hun Huh, S. (2014). Impurity-Dependent Nanoporous Structures of Anodic Aluminum Oxides. Asian Journal of Chemistry, 26(13), 4143–4144. https://doi.org/10.14233/ajchem.2014.17734

Download Citation

References

Y.K. Su, D.H. Qin, H.L. Zhang, H. Li and H.L. Li, Chem. Phys. Lett., 388, 406 (2004); doi:10.1016/j.cplett.2004.03.041.
S.L. Tang, W. Chen, M. Lu, S.G. Yang, F.M. Zhang and Y.W. Du, Chem. Phys. Lett., 384, 1 (2004); doi:10.1016/j.cplett.2003.11.085.
D.H. Qin, M. Lu and H.L. Li, Chem. Phys. Lett., 350, 51 (2001); doi:10.1016/S0009-2614(01)01254-4.
J. Choi, Y. Luo, R.B. Wehrspohn, R. Hillebrand, J. Schilling and U. Gösele, J. Appl. Phys., 94, 4757 (2003); doi:10.1063/1.1609033.
G. Che, B.B. Lakshmi, C.R. Martin, E.R. Fisher and R.S. Ruoff, Chem. Mater., 10, 260 (1998); doi:10.1021/cm970412f.
J.S. Suh and J.S. Lee, Appl. Phys. Lett., 75, 2047 (1999); doi:10.1063/1.124911.
K. Nielsch, J. Choi, K. Schwirn, R.B. Wehrspohn and U. Gösele, Nano Lett., 2, 677 (2002); doi:10.1021/nl025537k.
H. Masuda and K. Fukuda, Science, 268, 1466 (1995); doi:10.1126/science.268.5216.1466.
O. Jessensky, F. Müller and U. Gösele, Appl. Phys. Lett., 72, 1173 (1998); doi:10.1063/1.121004.
H. Masuda, K. Yada and A. Osaka, Jpn. J. Appl. Phys., 37(Part 2, No. 11A), L1340 (1998); doi:10.1143/JJAP.37.L1340.
H. Jung, J. Kim, J. Hahn and J.S. Suh, Chem. Phys. Lett., 402, 535 (2005); doi:10.1016/j.cplett.2004.12.097.
H. Masuda, H. Asoh, M. Watanabe, K. Nishio, M. Nakao and T. Tamamura, Adv. Mater., 13, 189 (2001); doi:10.1002/1521-4095(200102)13:3<189::AID-ADMA189>3.0.CO;2-Z.
T. Yanagishita, K. Nishio, M. Nakao, A. Fujishima and H. Masuda, Chem. Lett., 31, 976 (2002); doi:10.1246/cl.2002.976.
H. Masuda, K. Kanezawa, M. Nakao, A. Yokoo, T. Tamamura, T. Sugiura, H. Minoura and K. Nishio, Adv. Mater., 15, 159 (2003); doi:10.1002/adma.200390034.

References

Y.K. Su, D.H. Qin, H.L. Zhang, H. Li and H.L. Li, Chem. Phys. Lett., 388, 406 (2004); doi:10.1016/j.cplett.2004.03.041.

S.L. Tang, W. Chen, M. Lu, S.G. Yang, F.M. Zhang and Y.W. Du, Chem. Phys. Lett., 384, 1 (2004); doi:10.1016/j.cplett.2003.11.085.

D.H. Qin, M. Lu and H.L. Li, Chem. Phys. Lett., 350, 51 (2001); doi:10.1016/S0009-2614(01)01254-4.

J. Choi, Y. Luo, R.B. Wehrspohn, R. Hillebrand, J. Schilling and U. Gösele, J. Appl. Phys., 94, 4757 (2003); doi:10.1063/1.1609033.

G. Che, B.B. Lakshmi, C.R. Martin, E.R. Fisher and R.S. Ruoff, Chem. Mater., 10, 260 (1998); doi:10.1021/cm970412f.

J.S. Suh and J.S. Lee, Appl. Phys. Lett., 75, 2047 (1999); doi:10.1063/1.124911.

K. Nielsch, J. Choi, K. Schwirn, R.B. Wehrspohn and U. Gösele, Nano Lett., 2, 677 (2002); doi:10.1021/nl025537k.

H. Masuda and K. Fukuda, Science, 268, 1466 (1995); doi:10.1126/science.268.5216.1466.

O. Jessensky, F. Müller and U. Gösele, Appl. Phys. Lett., 72, 1173 (1998); doi:10.1063/1.121004.

H. Masuda, K. Yada and A. Osaka, Jpn. J. Appl. Phys., 37(Part 2, No. 11A), L1340 (1998); doi:10.1143/JJAP.37.L1340.

H. Jung, J. Kim, J. Hahn and J.S. Suh, Chem. Phys. Lett., 402, 535 (2005); doi:10.1016/j.cplett.2004.12.097.

H. Masuda, H. Asoh, M. Watanabe, K. Nishio, M. Nakao and T. Tamamura, Adv. Mater., 13, 189 (2001); doi:10.1002/1521-4095(200102)13:3<189::AID-ADMA189>3.0.CO;2-Z.

T. Yanagishita, K. Nishio, M. Nakao, A. Fujishima and H. Masuda, Chem. Lett., 31, 976 (2002); doi:10.1246/cl.2002.976.

H. Masuda, K. Kanezawa, M. Nakao, A. Yokoo, T. Tamamura, T. Sugiura, H. Minoura and K. Nishio, Adv. Mater., 15, 159 (2003); doi:10.1002/adma.200390034.

Issue

Vol. 26 No. 13 (2014): Vol 26 Issue 13

Impurity-Dependent Nanoporous Structures of Anodic Aluminum Oxides

Corresponding Author(s) : Seung Hun Huh

Abstract

Keywords

Full Article

Download Citation

References

Table Of Contents