Study on Modification of SiO2 Thin Film Surface Morphology and Its Electrical Performance

Xiang Liu; Hui Liu

doi:10.14233/ajchem.2014.15907

Issue

Vol. 26 No. 12 (2014): Vol 26 Issue 12

Issue Published : June 5, 2014

This work is licensed under a Creative Commons Attribution 4.0 International License.

Study on Modification of SiO2 Thin Film Surface Morphology and Its Electrical Performance

https://doi.org/10.14233/ajchem.2014.15907

Xiang Liu

School of Materials Science and Engineering, Dalian Jiaotong University, Dalian, Liaoning 116028, P.R. China

Hui Liu

School of Electronic and Information Engineering, Dalian University of Technology, Dalian 116024, P.R. China

Corresponding Author(s) : Xiang Liu

liuxiang8282@163.com

Asian Journal of Chemistry, Vol. 26 No. 12 (2014): Vol 26 Issue 12
Article Published : June 5, 2014

Abstract

Silicon dioxide thin film was prepared by thermal growth method and PMMA film layer was prepared by spin coating. Silane coupling agent octadecyltrichlorosilane (OTS) be used to modified the surface of SiO₂. The result of atomic force microscope (AFM) showed that using PMMA and OTS modified SiO₂ layer can effectively improve the surface flatness and reduce the surface energy. The PMMA insulating layer reduces the contact barrier between the organic semiconductor insulating layer and the growth of thin films of copper phthalocyanin became more consistent. Compare with the single SiO₂ insulation layer, thin film transistor devices on SiO₂/PMMA and SiO₂/OTS compound insulation layer with improved carrier mobility and lower threshold voltage. Experimental results showed that using double insulation layer structure can effectively improve the performance of organic thin film transistor.

Keywords

SiO2 PMMA Octadecyltrichlorosilane Insulator

Liu, X., & Liu, H. (2014). Study on Modification of SiO2 Thin Film Surface Morphology and Its Electrical Performance. Asian Journal of Chemistry, 26(12), 3453–3456. https://doi.org/10.14233/ajchem.2014.15907

Download Citation

References

K. Kim, T.H. Kwak, M.Y. Cho, J.W. Lee and J. Joo, Synth. Met., 158, 553 (2008); doi:10.1016/j.synthmet.2008.03.028.
J. Puigdollers, C. Voz, M. Fonrodona, S. Cheylan, M. Stella, J. Andreu, M. Vetter and R. Alcubilla, J. Non-Cryst. Solids, 352, 1778 (2006); doi:10.1016/j.jnoncrysol.2005.10.063.
Y. Noguchi, T. Sekitani and T. Someya, Appl. Phys. Lett., 89, 253507 (2006); doi:10.1063/1.2416001.
H.E.A. Huitema, G.H. Gelinck, J.B.P.H. van der Putten, K.E. Kuijk, C.M. Hart, E. Cantatore, P.T. Herwig, A.J.J.M. van Breemen and D.M. de Leeuw, Nature, 414, 599 (2001); doi:10.1038/414599a.
C.D. Dimitrakopoulos and P.R.L. Malenfant, Adv. Mater., 14, 99 (2002); doi:10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9.
B. Crone, A. Dodabalapur, Y.-Y. Lin, R.W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H.E. Katz and W. Li, Nature, 403, 521 (2000); doi:10.1038/35000530.
C.D. Sheraw, L. Zhou, J.R. Huang, D.J. Gundlach, T.N. Jackson, M.G. Kane, I.G. Hill, M.S. Hammond, J. Campi, B.K. Greening, J. Francl and J. West, Appl. Phys. Lett., 80, 1088 (2002); doi:10.1063/1.1448659.
T.W. Kelley, L.D. Boardman, T.D. Dunbar, D.V. Muyres, M.J. Pellerite and T.P. Smith, J. Phys. Chem. B, 107, 5877 (2003); doi:10.1021/jp034352e.
K.T. Gon. T.G. Kim, E.H. Jeong, S.C. Lim, S.H. Kim, G.H. Kim, S.H. Kim, H.-Y. Jeon and J.H. Youk, Synth. Met., 159, 749 (2009); doi:10.1016/j.synthmet.2008.11.027.
B. Insung. I. Bae, S.J. Kang, Y.J. Park, T. Furukawa and C. Park, Curr. Appl. Phys., 10, e54 (2010); doi:10.1016/j.cap.2009.12.013.
S.H. Deshmukh, D.K. Burghate and S.N. Shilaskar, Indian J. Pure Appl. Phys., 46, 344 (2008).
D. Nilsson, M. Chen, T. Kugler, T. Remonen, M. Armgarth and M. Berggren, Adv. Mater., 14, 51 (2002); doi:10.1002/1521-4095(20020104)14:1<51::AID-ADMA51>3.0.CO;2-#.
A. Basu and M. Mohsin, Indian J. Pure Appl. Phys., 48, 899 (2010).
K. Xiao, Y. Liu, Y. Guo, G. Yu, L. Wan and D. Zhu, Appl. Phys., A Mater. Sci. Process., 80, 1541 (2003); doi: 10.1007/s00339-003-2398-8.
J.D. Zhang, J. Wang, H.B. Wang and D. Yan, Appl. Phys. Lett., 84, 142 (2004); doi:10.1063/1.1638634.
J.F. Yuan, J.D. Zhang, J. Wang, X. Yan, D. Yan and W. Xu, Appl. Phys. Lett., 82, 3967 (2003); doi:10.1063/1.1580646.

References

K. Kim, T.H. Kwak, M.Y. Cho, J.W. Lee and J. Joo, Synth. Met., 158, 553 (2008); doi:10.1016/j.synthmet.2008.03.028.

J. Puigdollers, C. Voz, M. Fonrodona, S. Cheylan, M. Stella, J. Andreu, M. Vetter and R. Alcubilla, J. Non-Cryst. Solids, 352, 1778 (2006); doi:10.1016/j.jnoncrysol.2005.10.063.

Y. Noguchi, T. Sekitani and T. Someya, Appl. Phys. Lett., 89, 253507 (2006); doi:10.1063/1.2416001.

H.E.A. Huitema, G.H. Gelinck, J.B.P.H. van der Putten, K.E. Kuijk, C.M. Hart, E. Cantatore, P.T. Herwig, A.J.J.M. van Breemen and D.M. de Leeuw, Nature, 414, 599 (2001); doi:10.1038/414599a.

C.D. Dimitrakopoulos and P.R.L. Malenfant, Adv. Mater., 14, 99 (2002); doi:10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9.

B. Crone, A. Dodabalapur, Y.-Y. Lin, R.W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H.E. Katz and W. Li, Nature, 403, 521 (2000); doi:10.1038/35000530.

C.D. Sheraw, L. Zhou, J.R. Huang, D.J. Gundlach, T.N. Jackson, M.G. Kane, I.G. Hill, M.S. Hammond, J. Campi, B.K. Greening, J. Francl and J. West, Appl. Phys. Lett., 80, 1088 (2002); doi:10.1063/1.1448659.

T.W. Kelley, L.D. Boardman, T.D. Dunbar, D.V. Muyres, M.J. Pellerite and T.P. Smith, J. Phys. Chem. B, 107, 5877 (2003); doi:10.1021/jp034352e.

K.T. Gon. T.G. Kim, E.H. Jeong, S.C. Lim, S.H. Kim, G.H. Kim, S.H. Kim, H.-Y. Jeon and J.H. Youk, Synth. Met., 159, 749 (2009); doi:10.1016/j.synthmet.2008.11.027.

B. Insung. I. Bae, S.J. Kang, Y.J. Park, T. Furukawa and C. Park, Curr. Appl. Phys., 10, e54 (2010); doi:10.1016/j.cap.2009.12.013.

S.H. Deshmukh, D.K. Burghate and S.N. Shilaskar, Indian J. Pure Appl. Phys., 46, 344 (2008).

D. Nilsson, M. Chen, T. Kugler, T. Remonen, M. Armgarth and M. Berggren, Adv. Mater., 14, 51 (2002); doi:10.1002/1521-4095(20020104)14:1<51::AID-ADMA51>3.0.CO;2-#.

A. Basu and M. Mohsin, Indian J. Pure Appl. Phys., 48, 899 (2010).

K. Xiao, Y. Liu, Y. Guo, G. Yu, L. Wan and D. Zhu, Appl. Phys., A Mater. Sci. Process., 80, 1541 (2003); doi: 10.1007/s00339-003-2398-8.

J.D. Zhang, J. Wang, H.B. Wang and D. Yan, Appl. Phys. Lett., 84, 142 (2004); doi:10.1063/1.1638634.

J.F. Yuan, J.D. Zhang, J. Wang, X. Yan, D. Yan and W. Xu, Appl. Phys. Lett., 82, 3967 (2003); doi:10.1063/1.1580646.

Issue

Vol. 26 No. 12 (2014): Vol 26 Issue 12

Study on Modification of SiO2 Thin Film Surface Morphology and Its Electrical Performance

Corresponding Author(s) : Xiang Liu

Abstract

Keywords

Full Article

Download Citation

References

Table Of Contents