Copyright (c) 2013 AJC
This work is licensed under a Creative Commons Attribution 4.0 International License.
Internal Gain of InGaN/GaN Metal-Insulator-Semiconductor Photodetector
Corresponding Author(s) : Kai-Xiao Zhang
Asian Journal of Chemistry,
Vol. 25 No. 4 (2013): Vol 25 Issue 4
Abstract
In this paper, an InGaN/GaN metal-insulator-semiconductor photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition was studied. The high photoelectric responsivities of 0.31 and 0.27 A/W from the GaN and InGaN layer respectively and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this metal-insulator-semiconductor photodetector. The internal gain of the InGaN/GaN metal-insulator-semiconductor photodetectors measured at different reverse bias. The results indicate that the internal gain of the InGaN/GaN metal-insulator-semiconductor photodetector was 3.5 at 350 nm, 2.7 at 380 nm and the bias voltage at -3V.
Keywords
Download Citation
Endnote/Zotero/Mendeley (RIS)BibTeX
- J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito and Y. Nanishi, Appl. Phys. Lett., 80, 3967 (2002).
- P.C. Chang, C.H. Chen, S.J. Chang, Y.K. Su, P.C. Chen, Y.D. Jhou, C.H. Liu, H. Hung and S.M. Wang, Jpn. J. Appl. Phys., Part 1, 43, 2008 (2004).
- D.J. Chen, B. Liu, H. Lu, Z.L. Xie, R. Zhang and Y.D. Zheng, IEEE Elect. Device Lett., 30, 605 (2009).
- J.J. Zhou, B. Wen, R.L. Jiang, C.X. Liu, X.L. Ji, Z.L. Xie, D.J. Chen, P. Han, R. Zhang and Y.D. Zheng, Chinese Phys., 16, 2120 (2007).
- T.D. Veal, P.H. Jefferson, L.F.J. Piper, C.F. McConville, T.B. Joyce, P.R. Chalker, L. Considine, H. Lu and W.J. Schaff, Appl. Phys. Lett., 89, 202110 (2006).
- S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, H. Lu and W.J. Schaff, Phys. Rev. B, 71, 161201-1 (2005).
- D.J. Chen, Y. Huang, B. Liu, Z.L. Xie, R. Zhang and Y.D. Zheng, J. Appl. Phys., 105, 061734 (2009).
- V. Adivarahan, G. Simin, J.W. Yang, A. Lunev, M.A. Khan, N. Pala, M. Shur and R. Gaska, Appl. Phys. Lett., 77, 863 (2000).
- R. Singh, D. Doppalapudi, T.D. Moustakes and L.T. Romano, Appl. Phys. Lett., 72, 1089 (1998).
- C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D.P.R. Aplin, J. Park, X.Y. Bao, Y.H. Lo and D. Wang, Nano Lett., 7, 1003 (2007).
- J.S. Liu, C.X. Shan, B.H. Li, Z.Z. Zhang, C.L. Yang, D.Z. Shen and X.W. Fan, Appl. Phys. Lett., 97, 251102 (2010).
References
J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito and Y. Nanishi, Appl. Phys. Lett., 80, 3967 (2002).
P.C. Chang, C.H. Chen, S.J. Chang, Y.K. Su, P.C. Chen, Y.D. Jhou, C.H. Liu, H. Hung and S.M. Wang, Jpn. J. Appl. Phys., Part 1, 43, 2008 (2004).
D.J. Chen, B. Liu, H. Lu, Z.L. Xie, R. Zhang and Y.D. Zheng, IEEE Elect. Device Lett., 30, 605 (2009).
J.J. Zhou, B. Wen, R.L. Jiang, C.X. Liu, X.L. Ji, Z.L. Xie, D.J. Chen, P. Han, R. Zhang and Y.D. Zheng, Chinese Phys., 16, 2120 (2007).
T.D. Veal, P.H. Jefferson, L.F.J. Piper, C.F. McConville, T.B. Joyce, P.R. Chalker, L. Considine, H. Lu and W.J. Schaff, Appl. Phys. Lett., 89, 202110 (2006).
S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, H. Lu and W.J. Schaff, Phys. Rev. B, 71, 161201-1 (2005).
D.J. Chen, Y. Huang, B. Liu, Z.L. Xie, R. Zhang and Y.D. Zheng, J. Appl. Phys., 105, 061734 (2009).
V. Adivarahan, G. Simin, J.W. Yang, A. Lunev, M.A. Khan, N. Pala, M. Shur and R. Gaska, Appl. Phys. Lett., 77, 863 (2000).
R. Singh, D. Doppalapudi, T.D. Moustakes and L.T. Romano, Appl. Phys. Lett., 72, 1089 (1998).
C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D.P.R. Aplin, J. Park, X.Y. Bao, Y.H. Lo and D. Wang, Nano Lett., 7, 1003 (2007).
J.S. Liu, C.X. Shan, B.H. Li, Z.Z. Zhang, C.L. Yang, D.Z. Shen and X.W. Fan, Appl. Phys. Lett., 97, 251102 (2010).