Electrical Resistivity, Hall Coefficient and Electronic Mobility in Indium Antimonide at Different Magnetic Fields and Temperatures

Abstract

The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25-100 ºC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility = 10⁶ cm²/V.S. The Hall coefficient R_H was measured as function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilogauss. The Hall coefficient R_H decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R_H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of p and R_H with temperatures as well as with magnetic fields.