Leakage Current Through the Ultra Thin Silicon Dioxide

Abstract

A significant issue i.e., leakage of current through the gate oxide, has been considered relevant to the use of ultra thin (< 1-2 nm) pure oxides of silicon in the next complementary metal oxide semiconductor (CMOS) device generation based on the analytical Landauer-Buttiker method. The ratio of leakage of current through the single and double oxide was also estimated. The result shows that the double gate can reduce the leakage of current.