Comparison of N and S Doped TiO2 Electrode for Dye Sensitized Solar Cells

Abstract

Doped TiO₂ semiconductor thin films were synthesized using N and S as photovoltaic propertyenhancing impurities by micro-plasma oxidation method. The influence of the doping ions on the structural and microstructure of the TiO₂ films were investigated by X-ray diffraction, scanning electron microscopy and electrical impedance spectra. The results show that the dye-sensitized solar cell efficiency fabricated with doped TiO₂ is remarkably better than that of undoped TiO₂. Also, the performance of N-doped TiO₂ electrode is better than that of S-doped TiO₂ electrode in terms of Voc, short circuit current density (Jsc) and power conversion efficiency. These phenomena were related to the surface area, crystalline structures and charge transfer kinetics modifications induced by non-metal-ion dopants.