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Vol. 16 No. 2 (2004): Vol 16 Issue 2

Photo Degradation of p-Nitrophenol in Presence of Semiconductor

J.D. Joshi
Department of Chemistry, Sardar Patel University, Vallabh Vidyanagar-388 120, India
Jabali Vora
Department of Chemistry, Hemchandracharya North Gujarat University, Patan-384 265, India
Sangita Sharma
Department of Chemistry, Hemchandracharya North Gujarat University, Patan-384 265, India
Chirag C. Patel
Department of Chemistry, Hemchandracharya North Gujarat University, Patan-384 265, India
Ashok B. Patel
Department of Chemistry, Hemchandracharya North Gujarat University, Patan-384 265, India

Corresponding Author(s) : J.D. Joshi

Asian Journal of Chemistry, Vol. 16 No. 2 (2004): Vol 16 Issue 2

Abstract

The photocatalytic degradation of p-nitrophenol by irradiation in presence of semiconductor ZnO was studied. Kinetics of the reaction were found to be affected by parameters like concentration of substrate, pH, amount of photocatalyst, light intensity, band gap, etc. The effects of radical quencher, sensitizer were also studied. A probable mechanism is also suggested.

Keywords

Degradation Photocatalytic p-Nitrophenol Semiconductor
Joshi, J., Vora, J., Sharma, S., C. Patel, C., & B. Patel, A. (2016). Photo Degradation of p-Nitrophenol in Presence of Semiconductor. Asian Journal of Chemistry, 16(2), 1069–1075. Retrieved from https://asianpubs.org/index.php/ajchem/article/view/14527
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