Stoichiometry Determination Across the Face of Hg1-xCdxTe Semiconductors

S. Banisaeid; H. Rahemi; S.F. Tayyari

Issue

Vol. 17 No. 2 (2005): Vol 17 Issue 2

Issue Published : December 30, 2004

Stoichiometry Determination Across the Face of Hg1-xCdxTe Semiconductors

S. Banisaeid

Chemistry Department, Urmia University, Urmia, 57154, Iran

H. Rahemi

Chemistry Department, Urmia University, Urmia, 57154, Iran

S.F. Tayyari

Chemistry Department, Ferdowsi University, Mashhad 91775-1436, Iran

Corresponding Author(s) : H. Rahemi

hrakemi@yahoo.com

Asian Journal of Chemistry, Vol. 17 No. 2 (2005): Vol 17 Issue 2
Article Published : January 28, 2016

Abstract

Variation of E₁ and E₁ + D₁ band gap energies of mercury cadmium telluride with composition x across the face of a number of p-type and n-type samples have been determined. A three-dimensional presentation of these variations has been introduced.

Keywords

Hg1-xCdxTe Stoichiometry determination Electrolyte electro-reflectance spectra

Banisaeid, S., Rahemi, H., & Tayyari, S. (2016). Stoichiometry Determination Across the Face of Hg1-xCdxTe Semiconductors. Asian Journal of Chemistry, 17(2), 702–706. Retrieved from https://asianpubs.org/index.php/ajchem/article/view/14261

Issue

Vol. 17 No. 2 (2005): Vol 17 Issue 2

Stoichiometry Determination Across the Face of Hg1-xCdxTe Semiconductors

Corresponding Author(s) : H. Rahemi

Abstract

Keywords

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