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Study of Chemical Bath Deposited In2S3 Thin Films
Corresponding Author(s) : S.S. Tulenin
Asian Journal of Chemistry,
Vol. 29 No. 5 (2017): Vol 29 Issue 5
Abstract
Indum(III) sulfide (In2S3) thin films were grown by means of chemical bath deposition from acid solution. Calculation of ionic equilibrium with using of thermodynamic constants for systems defines boundary conditions of formation In2S3. Films were characterized by means of XRD, SEM, EDX and XPS methods. According to XRD, films have cubic structure of In2S3. XPS method shown that the surface of In2S3 thin film includes oxygen and carbon contained impurities. SEM confirmed nanosize nature of thin films. Optical band gap of indium(III) sulfide equal to 2.3 eV.
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- X.H. Xu, F. Wang, J.J. Liu, K.C. Park and M. Fujishige, Sol. Energy Mater. Sol. Cells, 95, 791 (2011); https://doi.org/10.1016/j.solmat.2010.10.025.
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- K. Otto, A. Katerski, A. Mere, O. Volobujeva and M. Krunks, Thin Solid Films, 519, 3055 (2011); https://doi.org/10.1016/j.tsf.2010.12.027.
- A.V. Novoselova, Fiziko-himicheskie svoystva poluprovodnikovih vechestv, Nauka, Moscow, p. 339 (1979).
- T.T. John, C.S. Kartha, K.P. Vijayakumar, T. Abe and Y. Kashiwaba, Appl. Phys., A Mater. Sci. Process., 82, 703 (2006); https://doi.org/10.1007/s00339-005-3385-z.
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- S. Lugo-Loredo, Y. Peña-Méndez, M. Calixto-Rodriguez, S. Messina-Fernández, A. Alvarez-Gallegos, A. Vázquez-Dimas and T. Hernández- García, Thin Solid Films, 550, 110 (2014); https://doi.org/10.1016/j.tsf.2013.10.115.
- V.P. Markov, L.N. Maskaeva and P.N. Ivanov, Gidrohimicheskoe osajdenie plenok sulfidov metallov: modelirovanie i experiment, 1nd edition, UrO RAS, Yekaterinburg, p. 276 (2006).
- V.F. Markov, S.S. Tulenin, L.N. Maskaeva, M.V. Kuznetsov and N.M. Barbin, Tech. Phys. Lett., 38, 290 (2012); https://doi.org/10.1134/S1063785012030297.
- B. Yahmadi, N. Kamoun, R. Bennaceur, M. Mnari, M. Dachraoui and K. Abdelkrim, Thin Solid Films, 473, 201 (2005); https://doi.org/10.1016/j.tsf.2004.04.002.
- S.S. Tulenin, V.F. Markov and L.N. Maskaeva, Butlerov’s Reports, 29, 79 (2012).
- C. Lokhande, A. Ennaoui, P. Patil, M. Giersig, K. Diesner, M. Muller and H. Tributsch, Thin Solid Films, 340, 18 (1999); https://doi.org/10.1016/S0040-6090(98)00980-8.
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References
X.H. Xu, F. Wang, J.J. Liu, K.C. Park and M. Fujishige, Sol. Energy Mater. Sol. Cells, 95, 791 (2011); https://doi.org/10.1016/j.solmat.2010.10.025.
S.S. Kale, R.S. Mane, C.D. Lokhande, K.C. Nandi and S.-H. Han, Mater. Sci. Eng. B, 133, 222 (2006); https://doi.org/10.1016/j.mseb.2006.06.002.
K. Otto, A. Katerski, A. Mere, O. Volobujeva and M. Krunks, Thin Solid Films, 519, 3055 (2011); https://doi.org/10.1016/j.tsf.2010.12.027.
A.V. Novoselova, Fiziko-himicheskie svoystva poluprovodnikovih vechestv, Nauka, Moscow, p. 339 (1979).
T.T. John, C.S. Kartha, K.P. Vijayakumar, T. Abe and Y. Kashiwaba, Appl. Phys., A Mater. Sci. Process., 82, 703 (2006); https://doi.org/10.1007/s00339-005-3385-z.
Y. Xiong, Y. Xie, G. Du, X. Tian and Y. Qian, J. Solid State Chem., 166, 336 (2002); https://doi.org/10.1006/jssc.2002.9598.
S. Lugo-Loredo, Y. Peña-Méndez, M. Calixto-Rodriguez, S. Messina-Fernández, A. Alvarez-Gallegos, A. Vázquez-Dimas and T. Hernández- García, Thin Solid Films, 550, 110 (2014); https://doi.org/10.1016/j.tsf.2013.10.115.
V.P. Markov, L.N. Maskaeva and P.N. Ivanov, Gidrohimicheskoe osajdenie plenok sulfidov metallov: modelirovanie i experiment, 1nd edition, UrO RAS, Yekaterinburg, p. 276 (2006).
V.F. Markov, S.S. Tulenin, L.N. Maskaeva, M.V. Kuznetsov and N.M. Barbin, Tech. Phys. Lett., 38, 290 (2012); https://doi.org/10.1134/S1063785012030297.
B. Yahmadi, N. Kamoun, R. Bennaceur, M. Mnari, M. Dachraoui and K. Abdelkrim, Thin Solid Films, 473, 201 (2005); https://doi.org/10.1016/j.tsf.2004.04.002.
S.S. Tulenin, V.F. Markov and L.N. Maskaeva, Butlerov’s Reports, 29, 79 (2012).
C. Lokhande, A. Ennaoui, P. Patil, M. Giersig, K. Diesner, M. Muller and H. Tributsch, Thin Solid Films, 340, 18 (1999); https://doi.org/10.1016/S0040-6090(98)00980-8.
S.S. Korovin, D.V. Drobot and P.I. Fedorov, Redkie i rasseyannye elementy, Khimiya i technologiya, MISIS, Moscow, p. 461 (1999).