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Vol. 21 No. 10 (2009): Vol 21, Issue 10, 2009

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Growth features and band gap determination of InBiSb long wavelength infrared photo detectors

R.P. Khatri
Department of physics, School of Sciences, Gujarat University Ahmedabad-380 009
S.M. Vyas
Department of physics, School of Sciences, Gujarat University Ahmedabad-380 009
P.J. Patel
Department of physics, School of Sciences, Gujarat University Ahmedabad-380 009
Dimple Shah
Sardar Vallabhbhai National Institute of Technology (SVNIT), Surat-395 007
M.P. Jani
Department of Physics, Faculty of Science, The M.S.University of Baroda, Vadodra-390 002

Corresponding Author(s) : R.P. Khatri

rajukhatri_222@yahoo.co.in

Asian Journal of Chemistry, Vol. 21 No. 10 (2009): Vol 21, Issue 10, 2009

Abstract

Ternary (InBiSb) compound widely used as long wavelength infrared photo detectors. InBiSb crystal were grown by Bridgman technique with temperature gradient of 60 ºC/cm and the growth velocity 0.5cm/hr.The different growth features were observed on top free surface of the InBiSb single crystal which is predominant of layers growth mechanism. Later on, the crystal pellets were used for FourierTransformInfraRed measurement in wavelength range 2.5-25µm which gives band gap of the bulk crystal. The results were discussed and reported in detail.

Keywords

Crystal growth layer structure energy gap
(1)
Khatri, R.; Vyas, S.; Patel, P.; Shah, D.; Jani, M. Growth Features and Band Gap Determination of InBiSb Long Wavelength Infrared Photo Detectors. ajc 2026, 21, S135-137.
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